MX0912B100Y and MZ0912B100Y are NPN microwave power transistors produced by Philips. They feature high emitter efficiency, excellent current sharing capability, high VSWR, stable characteristics and excellent service life.
This document is a product specification datasheet for the Philips MX0912B100Y and MZ0912B100Y, which are NPN silicon planar epitaxial microwave power transistors. The MX0912B100Y features a SOT439A metal ceramic flange package, while the MZ0912B100Y utilizes a SOT443A package with the base connected to the flange. Both devices are designed for common base class-C broadband pulse power amplifiers operating between 960 and 1215 MHz.
| Collector-base voltage (VcBo) | 65 V |
|---|---|
| Collector-emitter voltage (Vces) | 60 V |
| Collector current (DC) | 6 A |
| Total power dissipation | 290 W |
| Operating junction temperature | 200 °C |
| Thermal resistance junction to mounting-base | 3.2 K/W |
| Operating frequency range | 0.960 to 1.215 GHz |
No, these products are not designed for use in life support appliances, devices, or systems where malfunction can result in personal injury.
The transistors operate at frequencies from 0.960 to 1.215 GHz.