The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.
The MSC80186 is a hermetically sealed NPN power transistor featuring a unique matrix structure. It is specifically designed for Class A linear operation in common emitter configurations, providing high gain and high output power at the 1.0 dB compression point.
Key specifications include a typical frequency of 3.2 GHz and a noise figure of 12.5 dB @ 2 GHz. The device supports an VSWR capability of 15:1 under rated conditions and is suitable for general-purpose linear applications.
| Device Type | NPN power transistor |
|---|---|
| Operation Class | Class A linear operation |
| VSWR Capability | 15:1 @ Rated Conditions |
| Typical Frequency | 3.2 GHz |
| Noise Figure | 12.5 dB @ 2 GHz |
| Collector-Emitter Bias Voltage | 20 V |
| Junction Temperature | 200 °C |
| Collector Current (Max) | 500 mA |
The typical frequency is 3.2 GHz.
The device has a typical noise figure of 12.5 dB when operating at 2 GHz.
The absolute maximum rating for collector-to-emitter bias voltage is 20 V.
At 2.0 GHz with an output power of 30.0 dBm, the typical power gain is between 7.0 and 9.0 dB.