This document describes the FDS7066N7 model N-Channel MOSFET power device produced by Fairchild Semiconductor Corporation in 2003. The device is designed for low side synchronous rectifier operation, with extremely low RDS(ON) and high performance. It is suitable for applications such as synchronous rectification and DC/DC converters.
This document is a technical datasheet for the Fairchild Semiconductor FDS7066N7, an N-Channel MOSFET designed specifically to improve efficiency in DC/DC converters. It features high-performance trench technology optimized for low-side synchronous rectifier operation within a FLMP SO-8 package.
The datasheet provides comprehensive electrical characteristics including off-state breakdown voltage, on-resistance values at various gate voltages and temperatures, switching times, and capacitance data. It also includes typical performance graphs, maximum safe operating areas, transient thermal response curves, and dimensional outline drawings for the device.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 23 A |
| On-Resistance @ Vgs=10V, Id=23A | 4.5 mΩ Typ |
| Package Type | FLMP SO-8 |
| Operating Junction Temperature Range | -55 to +150 °C |
It is designed specifically for synchronous or conventional switching PWM controllers, optimized for low-side synchronous rectifier operation.
The power dissipation for single operation is 3.0 W when mounted on a 4in² pad.