InGaAs PIN long wavelength (up to 2.1 µm) photodiode G8422/G8372/G5852 series features include cut-off wavelength of 2.1 µm, 3-pin TO-18 package low price, TE-cooled type TO-8 package low dark current, active area of f0.3 to f3 mm. Applications include gas analyzer, water content analyzer and near infrared photometry.
This document provides technical specifications for the G8422, G8372, and G5852 series of Long Wavelength type (up to 2.1 um) InGaAs PIN photodiodes from Hamamatsu Photonics K.K. The devices are available in various packages including low-price 3-pin TO-18 and TE-cooled TO-8 types designed for low dark current.
| Cut-off wavelength | 2.1 um |
|---|---|
| Active area range | $0.3 to #3 mm |
| Operating temperature (Non-cooled) | -40 to +85 C |
The long wavelength type has a cut-off wavelength of up to 2.1 um.