This datasheet details the electrical and switching characteristics of NEC's 1SS222 and 1SS223 silicon epitaxial diodes. These diodes are designed for high-speed switching applications, including limiters, clippers, and signal processing. Key specifications include a maximum reverse voltage of 100V, peak forward current of 300mA, and a reverse recovery time of 3.0ns. The document includes absolute maximum ratings, electrical characteristics, and typical performance curves. It also outlines quality grades and application recommendations for different use cases.
| Reverse Recovery Time | 3.0 ns MAX. |
|---|---|
| Capacitance | 4.0 pF MAX. |
| Peak Reverse Voltage | 70 V (1SS222) / 100 V (1SS223) |
| Peak Forward Current | 300 mA |
| Junction Temperature | 150 °C |
The maximum reverse voltage is 70V for 1SS222 and 100V for 1SS223.
The reverse recovery time is 3.0 nanoseconds maximum.
Recommended applications include switching, limiters, and clippers.