1SS304 is a high-speed switching silicon diode launched by NEC. It has the characteristics of low capacitance and high switching speed. It is suitable for various switching, limiting, clipping and other applications.
This datasheet details the electrical characteristics and absolute maximum ratings for the NEC 1SS304 silicon epitaxial double diode. It is designed for switching, limiting, and clipping applications. Key specs include a typical capacitance of 1.1 pF and a reverse recovery time of 3.0 ns max. The diode is available in a common cathode configuration and is suitable for general-purpose use in electronic circuits.
The document includes typical performance curves, test circuits, and quality grade classifications for NEC semiconductor products. It specifies that the device is rated for junction temperatures up to 150°C and storage temperatures from -55°C to +150°C.
| Capacitance | 1.1 pF TYP. |
|---|---|
| Reverse Recovery Time | 3.0 ns MAX. |
| Peak Reverse Voltage | 75 V |
| Average Rectified Current | 100 mA |
| Junction Temperature | 150°C |
The typical capacitance is 1.1 pF.
The maximum reverse recovery time is 3.0 ns.
The maximum peak reverse voltage is 75 V.
The quality grades are "Standard", "Special", and "Specific", with "Standard" being the default unless otherwise specified.