1SS303 is a high voltage fast switching diode from NEC, with low capacitance, high speed switching and other features.
This datasheet details the electrical characteristics and absolute maximum ratings for the NEC 1SS303 silicon epitaxial double diode. It is designed for switching, limiting, and clipping applications with a common anode configuration. The diode offers low capacitance (2.5 pF typical) and high-speed switching (4.0 ns maximum reverse recovery time). Key ratings include peak reverse voltage of 75 V and average rectified current of 100 mA.
The document includes typical electrical curves, test circuits, and quality grade classifications for NEC semiconductor products, specifying applications for "Standard" grade (e.g., computers, office equipment) and "Special" grade (e.g., transportation equipment).
| Capacitance | 2.5 pF TYP. |
|---|---|
| Reverse Recovery Time | 4.0 ns MAX. |
| Peak Reverse Voltage | 75 V |
| Average Rectified Current | 100 mA |
| Junction Temperature | 150 °C |
The typical capacitance is 2.5 pF.
The maximum reverse recovery time is 4.0 ns.
The peak reverse voltage rating is 75 V.
It is recommended for switching, limiting, and clipping applications with a common anode configuration.