This document describes the features and characteristics of the 8 Mbit flash memory models M29F800DT and M29F800DB, including supply voltage, access time, programming time, memory block quantity, programming/erase controller, unlock bypass program command, etc.
The document is a technical datasheet for the M29F800DT and M29F800DB series of 8 Mbit (1Mb x8 or 512Kb x16) non-volatile flash memory devices manufactured by STMicroelectronics. These devices operate with a single 5V supply voltage and support read, erase, and reprogram operations.
| Memory Capacity | 8 Mbit (1Mb x8 or 512Kb x16) |
|---|---|
| Supply Voltage | 5V +10% |
| Access Time | 55, 70, 90ns |
| Programming Time | 10us per Byte/Word typical |
| Program/Erase Cycles | 100,000 cycles per block |
The Manufacturer Code is 0020h.
The Top Device Code for M29F800DB is 2258h.
The memory is offered in SO44 and TSOP48 (12 x 20mm) packages.