M36D0R6040T0 M36D0R6040B0 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
The document describes the M36D0R6040T0 and M36D0R6040B0 devices, which combine a 64-Mbit Multiple Bank Flash memory and a 16-Mbit Pseudo SRAM in a single Stacked TFBGA67 package. The device is available in standard and lead-free versions compliant with RoHS directives.
| Memory Configuration (Top) | 64 Mbit (4Mb x16) Flash Memory and 16 Mbit (1Mb x16) PSRAM |
|---|---|
| Memory Configuration (Bottom) | 64 Mbit (4Mb x16) Flash Memory and 16 Mbit (1Mb x16) PSRAM |
| Supply Voltage Range | 1.7V to 1.95V |
| Random Access Time | 70ns |
| Program/Erase Cycles | 100,000 per block |
The Device Code (Top Flash Configuration) for M36D0R6040T0 is 8810h.
The Device Code (Bottom Flash Configuration) for M36D0R6040B0 is 8811h.
The Manufacturer Code is 20h.