The document describes the PN3644 and PN3645 as PNP silicon planar epitaxial transistors manufactured by Micro Electronics Ltd. These devices are specifically designed for use in small signal general purpose applications, functioning effectively as both amplifiers and switches.
Key electrical characteristics provided include absolute maximum ratings such as a collector-base voltage of 60V, a total dissipation of 1W at 25°C, and an operating junction temperature range from -55 to 150°C. The datasheet also includes typical electrical characteristic curves for current gain (HFE) versus collector current.
| Collector-Base Voltage | 60V |
|---|---|
| Collector-Emitter Voltage | 45V (PN3644), 60V (PN3645) |
| Emitter-Base Voltage | 5V |
| Collector Current | 500mA |
| Total Dissipation @ Tj=25°C | 1W |
| Operating Junction Temperature | -55 to 150°C |
The maximum collector current (Ic) is 500mA.
The transistors operate within a junction and storage temperature range of -55 to 150°C.