This document is a technical datasheet for the Micro Electronics BC 516 (PNP) and BC 517 (NPN) complementary silicon planar epitaxial Darlington transistors. These devices are designed specifically for preamplifier input stages that require high input impedance and high gain.
| Collector-Base Voltage VCBO | 40V |
|---|---|
| Collector-Emitter Voltage VcEO | 30V |
| Emitter~Base Voltage VEBO | 10V |
| Collector Current Ic | 400mA |
| Total Power Dissipation Prot | 625mW |
| Operating Junction Storage Temperature Tj,Tstg | -55°-£6 +150°C |
They are designed for preamplifier input stages that require high input impedance and high gain.
The maximum collector current is 400mA.
The maximum total power dissipation is 625mW.