NE325S01 is a high performance N-channel hetero junction field effect transistor, which has super low noise and high gain characteristics, suitable for DBS and other commercial systems.
The document describes the NEC NE325S01 as a hetero junction field effect transistor (HJ-FET) designed for DBS and commercial systems. It features a gate length of less than 0.20 um and offers typical noise figure and gain specifications at 12 GHz.
The datasheet provides absolute maximum ratings, recommended operating conditions, electrical characteristics including S-parameters and amplifier parameters across various frequencies, and typical mounting pad layout dimensions.
| Noise Figure (NF) | 0.45 dB TYP. |
|---|---|
| Associated Gain | 12.5 dB TYP. |
| Frequency Range | C to Ku Band |
| Gate Length | < 0.20 um |
| Gate Width | 200 um |
| Drain to Source Voltage (Max) | 4.0 V |
| Total Power Dissipation | 165 mW |
The typical noise figure is 0.45 dB.
Typical specifications such as Noise Figure and Associated Gain are measured at f = 12 GHz.