This document introduces the features of the 256Mb: x4, x8, x16 DDR SDRAM produced by Micron Technology, Inc., including voltage, data transfer rate, storage capacity, etc.
This document is a technical datasheet for the Micron 256Mb DDR SDRAM family, which includes models MT46V64M4, MT46V32M8, and MT46V16M16. The devices feature a high-speed CMOS architecture with internal quad-bank configuration to achieve high-bandwidth operation.
| Capacity | 256Mb (268,435,456 bits) |
|---|---|
| Architecture | Double Data Rate (DDR) SDRAM |
| Voltage VDD | +4.25V ±0.2V or +2.6V ±0.1V |
| Voltage VDDQ | +2.5V ±0.2V or +2.6V ±0.1V |
| Clock Inputs | Differential (CK and CK#) |
| Temperature Rating Commercial | 0°C to +70°C |
| Temperature Rating Industrial | -40°C to +85°C |
The devices are configured as MT46V64M4 (16 Meg x 4), MT46V32M8 (8 Meg x 8), and MT46V16M16 (4 Meg x 16).
The DDR SDRAM supports programmable READ or WRITE burst lengths of 2, 4, or 8 locations.
Yes, the device includes an auto refresh mode and a power-saving power-down mode.