Samsung K6E0808C1E-C/E-L K6E0808C1E-I/E-P Data Sheet

This is a 32Kx8 bit high-performance CMOS static RAM, operating voltage is 5V, suitable for commercial and industrial temperature range.


Samsung K6E0808C1E-C/E-L K6E0808C1E-I/E-P Data Sheet - cover page
Brand
Samsung
Category
Memory
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
182 KB
Published
05 June, 2012
Updated
30 September, 2023
MD5 checksum
3514AF58CF8BE2CD9523BDEBCE4AFC4A

About this manual

The document details the specifications for the K6E0808C1E family of Static Random Access Memories (SRAM). These devices are organized as 32,768 words by 8 bits and utilize a single +5.0V power supply with TTL-compatible inputs and outputs. The memory is designed for high-density, high-speed system applications where no clock or refresh is required.

What's inside

  • Features
  • Ordering Information
  • Functional Block Diagram
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC and Operating Characteristics
  • AC Characteristics
  • Timing Waveforms

Specifications

Memory Organization32K x 8 Bit (32,768 words by 8 bits)
Operating Voltage+5.0V ±10%
Access Time (Max)10, 12, or 15ns
Operating Temperature (Industrial)-40 to 85 °C
Supply Current (Max)80mA

Frequently asked questions

What is the maximum storage temperature range for this device?

The device can be stored between -65 and 150 degrees Celsius.

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