Samsung KM68B261A 32K x 8 Bit High-Speed BiCMOS SRAM Datasheet

KM68B261A is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. It features fast access time, low power dissipation standby, single 5V power supply, and is designed for high-density high-speed system applications.


Samsung KM68B261A 32K x 8 Bit High-Speed BiCMOS SRAM Datasheet - cover page
Brand
Samsung
Category
Memory
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
76 KB
Published
05 June, 2012
Updated
28 September, 2023
MD5 checksum
0E0DB292BC1C4348BEBFBEB7A53B7D7B

About this manual

The Samsung KM68B261A is a 262,144-bit (32K x 8) high-speed Static Random Access Memory organized as 32,768 words by 8 bits. Fabricated using Samsung's advanced BiCMOS process, the device features fast access times of 6, 7, or 8 nanoseconds and is designed for high-density, high-speed system applications. It operates from a single +5V power supply with TTL-compatible inputs and outputs.

What's inside

  • Features
  • Functional Block Diagram
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • AC Characteristics
  • Timing Parameters (Read Cycle)
  • Timing Parameters (Write Cycle)
  • Package Dimensions

Specifications

Organization32K x 8 Bit
Access Time (Max)8 ns
Supply Voltage5V + 5%
Operating Temperature0 to 70 °C
Package Type32-pin SOJ-300

Frequently asked questions

Does this device require a clock or refresh?

No, the KM68B261A requires no clock or refresh.

What is the maximum operating temperature for this memory device?

The device can operate at temperatures up to 70 °C.

How many bits of data does each word in the KM68B261A store?

Each word stores 8 bits of data.

What is the maximum power dissipation rating for this component?

The maximum power dissipation is rated at 1.0 W.

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