The K4S161622H is a 16,777,216-bit synchronous high data rate dynamic random access memory organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/ O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latency
This document is a datasheet for the Samsung K4S161622H, a 16Mb high-speed synchronous DRAM organized as two banks of 512K x 16 bits. The device operates at frequencies up to 183MHz with a 3.3V power supply and supports LVTTL compatible interfaces.
| Capacity | 16Mb (512K x 16Bit x 2 Banks) |
|---|---|
| Supply Voltage | 3.3V |
| Operating Frequency (Max) | 183MHz |
| Refresh Period | 32ms |
The K4S161622H-TC60 model supports a maximum frequency of 166MHz.
The device requires a refresh period of 32ms.