This document describes the features of the HLB121A NPN triple diffused planar type high voltage transistor. The transistor features high breakdown voltage, low collector saturation voltage, and fast switching speed. The document also provides the maximum ratings and electrical characteristics of the transistor.
The HLB121A is an NPN triple diffused planar type high voltage transistor manufactured by Hi-Sincerity Microelectronics Corp. It is specifically designed for use in switching applications and features a high breakdown voltage, low collector saturation voltage, and fast switching speed.
The document provides absolute maximum ratings including storage temperatures from -55°C to +150°C and junction temperatures up to +150°C. Key electrical characteristics include a collector-to-base voltage of 600V and a total power dissipation of 1W at ambient temperature (TA=25°C). The device is packaged in a TO-92 plastic package. This manual is written in Chinese.
| Package Type | 3-Lead TO-92 Plastic Package |
|---|---|
| Transistor Type | NPN Triple Diffused Planar Type High Voltage Transistor |
| Collector to Base Voltage (Max) | 600 V |
| Collector to Emitter Voltage (Max) | 400 V |
| Total Power Dissipation (TA=25°C) | 1 W |
| Storage Temperature Range | -55 ~ +150 °C |
The maximum DC collector current (IC) is 300 mA.
No, the manufacturer states that HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications.