Specification sheet for the HI‑SINCERITY HMBT4403 PNP epitaxial planar transistor, including ratings, characteristics and package details.
The HMBT4403 is a PNP epitaxial planar transistor intended for general‑purpose applications that require high breakdown voltages. The datasheet lists absolute maximum ratings such as storage temperature, junction temperature, power dissipation and voltage limits.
Detailed electrical characteristics are provided, including collector‑to‑emitter voltage, current gain curves, saturation voltages, capacitance, cutoff frequency and safe operating area. Package information for the SOT‑23 surface‑mounted device and material specifications are also included.
| Storage Temperature | -55 ~ +150 °C |
|---|---|
| Maximum Junction Temperature | +150 °C |
| Collector‑to‑Base Voltage (VCBO) | -40 V |
| Collector‑to‑Emitter Voltage (VCEO) | -40 V |
| Typical hFE (VCE=1 V, 25 °C) | 30 |
| Transition Frequency (fT) | 200 MHz |
| Base‑Collector Capacitance (Cob) | 8.5 pF |
| Package | SOT‑23 surface‑mounted |
The maximum collector‑to‑emitter voltage (VCEO) is -40 V.
The HMBT4403 is supplied in an SOT‑23 surface‑mounted package.
The typical hFE at VCE = 1 V and 25 °C is 30.