The HI‑SINCERITY HBT169M thyristor product specification provides electrical parameters, thermal data, and package dimensions.
The HBT169M is a glass‑passivated, sensitive‑gate thyristor offered in a plastic SOT‑89 surface‑mount package. It is intended for general‑purpose switching and phase‑control applications and can be driven directly from microcontrollers or low‑power gate trigger circuits.
The specification lists key electrical ratings such as a 400 V repetitive off‑state voltage, 0.5 A average on‑state current, and a 8 A non‑repetitive peak on‑state current. Thermal characteristics include a storage temperature down to –150 °C and an operating junction limit of 125 °C. Detailed pin assignments, dimension drawings, and characteristic curves are also provided.
| Repetitive peak off‑state voltage (VDRM, VRRM) | 400 V |
|---|---|
| Average on‑state current (IT(AV)) | 0.5 A |
| RMS on‑state current (IT(RMS)) | 0.8 A |
| Non‑repetitive peak on‑state current (ITSM) | 8 A |
| Storage temperature (Tstg) | -150 °C |
| Operating junction temperature (Tj) | 125 °C |
The HBT169M is rated for a repetitive peak off‑state voltage of 400 V.
It is supplied in a 3‑lead SOT‑89 plastic surface‑mounted package.
The device can be stored down to –150 °C.