HBD140 is a PNP power transistor produced by HI-SINCERITY MICROELECTRONICS CORP. It has a maximum collector current of 1.5A, a maximum collector-emitter voltage of 80V, and a maximum emitter-base voltage of 5V.
This document is a product specification datasheet for the HBD140, a PNP power transistor manufactured by HI-SINCERITY Microelectronics Corp. The device is housed in a TO-126 plastic package and features a maximum collector current of 1.5A and a maximum collector-emitter voltage of 80V.
| Package Type | TO-126 plastic package |
|---|---|
| Max Collector Current (DC) | 1.5 A |
| Max Collector-Emitter Voltage | -80 V |
| Total Dissipation at Ta=25°C | 1.2 W |
| Storage Temperature Range | -65 to 150 °C |
The device supports a high current of up to 1.5 A.
The transistor has a low voltage limit of 80 V.
It comes in a TO-126 plastic package.