FQB13N06 / FQI13N06 60V N-Channel MOSFET is produced by Fairchild and has low gate charge, low reverse blocking resistance, high switching speed, etc. It is suitable for low voltage applications such as DC/DC converters, power management, etc.
This document provides design specifications for the FQB13N06 and FQI13N06, which are 60V N-Channel MOSFETs produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance and superior switching performance, making them suitable for low voltage applications such as DC/DC converters and power management in portable products.
The datasheet details absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters like capacitance and gate charge, and thermal properties. It also includes typical characteristic curves, test circuit diagrams, package dimensions for the 2PAK and S2PAK formats, and trademark information.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 13 A |
| Maximum Junction Temperature | +175 °C |
| On-Resistance (Typical) | 0.135 Ω |
| Total Gate Charge (Typical) | 5.8 nC |
The maximum operating and storage temperature range is -55 to +175 °C.
The devices are available in FQB Series 2PAK and FQI Series S2PAK packages.