This product is a N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary, high cell density, DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse endurance. This product is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
This document provides technical specifications and electrical characteristics for the Fairchild NDP408 series of N-channel enhancement mode power field effect transistors. These devices utilize proprietary DMOS technology to minimize on-state resistance and provide superior switching performance, making them suitable for low voltage applications such as automotive systems, DC/DC converters, and PWM motor controls.
| Drain-Source Voltage | 80 V |
|---|---|
| Continuous Drain Current | 12 A or 11 A |
| Pulsed Drain Current | 36 A or 33 A |
| Total Power Dissipation | 50 W |
| Maximum Junction Temperature | 175 °C |
| Package Types | TO-220 and TO-263 (D'PAK) |
They are suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits.
Yes, it features a rugged internal source-drain diode that can eliminate the need for an external Zener diode transient suppressor.
The device has a maximum junction temperature rating of 175°C.