FDS3670 is a 100V N-Channel PowerTrench MOSFET from Fairchild Semiconductor Corporation. It features faster switching speed and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
This document provides technical specifications for the Fairchild Semiconductor FDS3670, an N-Channel MOSFET designed to improve efficiency in DC/DC converters. Key features include a 100V drain-source breakdown voltage, 6.3A continuous current capability, and low gate charge of 57 nC typical.
The datasheet includes absolute maximum ratings, electrical characteristics such as on-resistance and switching times, and detailed package information for the SO-8 (SOIC) format. It also provides tape and reel data for automated assembly.
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current | 6.3 A |
| Gate Charge (Typical) | 57 nC |
| Package Type | SO-8 |
The device supports a continuous drain current of 6.3 A.
The maximum power dissipation for a single pulse is 25 W.
The device operates and stores within a junction temperature range of -55 to +150 °C.