The document describes a high conductance low leakage diode with high working inverse voltage and low leakage current. The document also provides the absolute maximum ratings and thermal characteristics of the product.
This document is a technical datasheet for the Fairchild Semiconductor MMBD1701/A, 1703/A, 1704/A, and 1705/A High Conductance Low Leakage Diode. The devices are packaged in SOT-23 and sourced from Process 1T.
| Working Inverse Voltage | 20 V |
|---|---|
| Average Rectified Current | 50 mA |
| DC Forward Current | 150 mA |
| Recurrent Peak Forward Current | 150 mA |
| Peak Forward Surge Current | 250 mA |
| Storage Temperature Range | -55 to +150 °C |
| Operating Junction Temperature | 150 °C |
| Total Device Dissipation | 350 mW |
The breakdown voltage (BV) is a minimum of 30 V when the reverse current (Ip) is 5.0 pA.
The maximum forward voltage (Vf) is 880 mV when the forward current (If) is 10 mA.
The reverse recovery time (Trr) ranges from 700 ps to 1.0 ns depending on the specific model and test conditions.