The document describes the features and characteristics of Vishay Telefunken TZS4678.TZS4717 Silicon Epitaxial Planar Z–Diodes, including Zener voltage, maximum voltage change, stability, and low noise. The product is mainly used for voltage stabilization.
This document provides technical specifications for the Vishay TZS4678...TZS4717 series of Silicon Epitaxial Planar Z-Diodes. Key features include a specified zener voltage at 50 pA, very high stability, and low noise performance suitable for voltage stabilization applications.
The datasheet details absolute maximum ratings such as power dissipation (500 mW) and junction temperature (175 °C). It includes comprehensive electrical characteristic tables listing specific types from TZS4678 to TZS4717, along with their respective zener voltages, tolerances, and current changes. Additionally, the document presents graphical data on power dissipation versus ambient temperature, voltage change under operating conditions, and thermal response curves.
| Power dissipation | 500 mW |
|---|---|
| Junction temperature | 175 °C |
| Storage temperature range | -65...4175 | °C |
| Zener voltage specified at | 50 pA |
The absolute maximum junction temperature rating is 175 °C.
The maximum power dissipation is 500 mW when the ambient temperature is 25°C.
The type numbers have a standard tolerance of + 5% on the nominal zener voltage.