This document introduces a 32 Mbit 3V supply flash memory product, which has the characteristics of wide power supply voltage range, short access time, fast programming time, and common flash interface.
The M28W320EB series provides 32 Mbit (2 Mbit × 16) non‑volatile flash memory that can be erased at the block level and programmed word‑by‑word using a single low‑voltage supply (2.7 V‑3.6 V). Optional 12 V Vpp speeds programming, and each block supports up to 100 000 program/erase cycles.
The devices are offered in two surface‑mount packages – TSOP48 (12 × 20 mm) and TFBGA47 (6.39 × 6.37 mm, 0.75 mm pitch) – and include features such as automatic standby, block protection, and a common flash interface compatible with JEDEC standards.
| Supply Voltage (Core) | 2.7 V to 3.6 V |
|---|---|
| Supply Voltage (I/O) | 1.65 V to 3.6 V |
| Optional Fast‑Program Voltage | 12 V |
| Access Time | 70 ns – 100 ns |
| Typical Programming Time | 10 s |
| Program/Erase Endurance | 100,000 cycles per block |
| Memory Capacity | 32 Mbit (2 Mbit × 16) |
The core supply voltage (Vpp) ranges from 2.7 V to 3.6 V.
Each block can be programmed and erased up to 100,000 times.
Typical programming time is about 10 seconds.