ST LET9060C handbook

LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology. Its superior performances make it an ideal solution for base station applications.

Brand
STMicroelectronics
File format
PDF
Published
05 June, 2012
Updated
01 October, 2023
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A94F32D4B8ADA43D4DBBBD3960C8729C
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ST LET9060C handbook PDF
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