LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology. Its superior performances make it an ideal solution for base station applications.
The LET9060C is an N-Channel enhancement-mode lateral MOSFET designed for high gain broadband commercial and industrial applications. It utilizes ST's latest LDMOS technology to provide excellent thermal stability, linearity, and reliability, making it ideal for base station applications operating up to 1.0 GHz.
| Gate-Source Voltage | -0.5 to +15 V |
|---|---|
| Drain Current | 7 A |
| Power Dissipation | 118 W |
| Max. Operating Junction Temperature | 200 °C |
| Output Power (Typical) | 60 W |
The device provides an output power of 60 W with a gain of 17.3 dB at 945 MHz.
Yes, it features a BeO free package.