2SA1011 is a NPN epitaxial silicon transistor, low frequency power amplifier, TO-220 package.
The document provides a datasheet for the Wing Shing 2SA1011 PNP epitaxial silicon transistor, intended for low‑frequency power amplification and supplied in a TO‑220 package. It lists the transistor’s absolute maximum ratings, such as voltage and current limits, and includes contact information for the manufacturer.
Key electrical characteristics are presented, including collector‑base voltage, collector‑emitter voltage, emitter‑base voltage, and DC collector current. The sheet also gives typical test conditions and parameters like current gain and saturation voltage.
| Collector‑Base Voltage (VCB) | -120 V |
|---|---|
| Collector‑Emitter Voltage (VCE) | -10 V |
The maximum collector‑base voltage is -120 V.
The maximum collector‑emitter voltage is -10 V.