Fuji Electric 2SK3927-01L N-Channel Silicon Power MOSFET Datasheet

2SK3927-01L,S,SJ is a power MOSFET produced by FUJI POWER. Its maximum voltage is 250V, maximum current is 34A, and maximum power is 270W.


Fuji Electric 2SK3927-01L N-Channel Silicon Power MOSFET Datasheet - cover page
Brand
FUJI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
154 KB
Published
05 June, 2012
Updated
30 September, 2023
MD5 checksum
5F5E252A4B300EF08983102EAE5A30B8

About this manual

This document is a technical datasheet for the Fuji Electric 2SK3927-01L (also available in S and SJ variants) N-channel silicon power MOSFET. The device features high-speed switching, avalanche-proof capabilities, and no secondary breakdown, making it suitable for switching regulators, DC-DC converters, and UPS systems.

The datasheet provides comprehensive absolute maximum ratings, including a drain-source voltage of 250V and a continuous drain current of 34A. It also lists detailed electrical characteristics such as gate threshold voltage, on-state resistance, and capacitance values at standard test conditions.

What's inside

  • Features
  • Applications
  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Output Characteristics
  • Switching Characteristics
  • Outline Drawings

Specifications

Drain-source voltage (Vps)250 V
Continuous Drain Current (Ib)34 A
Maximum Power Dissipation (Pp)270 W
Operating and Storage Temperature range-55 to +150 C
Drain-Source On-State Resistance (Rds(on))85 110 mΩ
Package TypeJEDEC TO-2204B

Frequently asked questions

What is the maximum continuous drain current for this MOSFET?

The device supports a continuous drain current of 34 A.

What is the maximum power dissipation at room temperature?

The maximum power dissipation is rated at 270 W when the case temperature is 25°C.

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