This document describes the features and characteristics of the 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series, including high speed switching, low on-resistance, no secondary breakdown, low driving power, and high voltage. The product is suitable for switching regulators, UPS, DC-DC converters, and general purpose power amplifiers.
This document is a technical datasheet for the Collmer Semiconductor 2SK2213-01L, an N-channel MOS-FET belonging to the FAP-IIA Series. The device operates at 500V with a continuous drain current of 10A and features low on-resistance suitable for high-speed switching applications.
| Drain-Source Voltage (Vds) | 500 V |
|---|---|
| Continuous Drain Current (Id) | 10 A |
| Max. Power Dissipation (Po) | 80 W |
| Operating and Storage Temperature Range | -55 ~ +150 °C |
| Drain-Source On-State Resistance (Rds(on)) | Typ. 0.76 Ohm |
| Gate Threshold Voltage (Vgs(th)) | Typ. 3.0 V |
The device can operate at temperatures up to +150 °C.
The device has a maximum drain-source voltage of 500 V and a continuous drain current of 10 A.