This document describes the features and characteristics of the 2SK1280 N-channel MOS-FET F-V Series product, including features such as fast recovery diode, high voltage, and low driving power. The product is suitable for applications such as motor control, inverters, and choppers.
The 2SK1280 is an N‑channel MOS‑FET designed for high‑voltage applications such as motor control, inverters, and choppers. It features a fast recovery diode, high voltage rating, and low driving power.
The document lists maximum ratings, electrical and thermal characteristics, and typical output and transfer curves. Key parameters include a 500 V drain‑source voltage, 18 A continuous drain current, 150 W power dissipation, and a junction‑to‑ambient thermal resistance of 35 °C/W.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) | 18 A |
| Pulsed Drain Current (ID(pulse)) | 72 A |
| Maximum Power Dissipation (PD) | 150 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Gate Threshold Voltage (VGS(th)) typical | 3.0 V |
| On‑State Resistance (RDS(on)) typical | 0.35 Ω |
| Input Capacitance (CISS) typical | 2400 pF |
| Output Capacitance (COSS) typical | 300 pF |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 35 °C/W |
The maximum drain‑source voltage is 500 V.
It can handle a continuous drain current of 18 A.