This document is a technical datasheet for the Fuji Electric MBI750LN-060 (750A) IGBT Module from the L series. It outlines key features such as high-speed switching, low saturation voltage, and voltage drive capabilities.
The module is designed for applications requiring high current, including motor drives for electric vehicles, inverters, and uninterruptible power supplies. The datasheet provides absolute maximum ratings, electrical characteristics at 25°C, thermal resistance values, and graphical representations of performance curves.
| Gate-Emitter Voltage (VaeEs) | +20 V |
|---|---|
| Continuous Current (Ic) | 750 A |
| Collector Current Pulse (Ic pulse) | 1500 A |
| Maximum Power Dissipation (Pc) | 3125 W |
| Operating Temperature (Tj) | +150 °C |
| Storage Temperature (Tstg) | -40 to +125 °C |
| Zero Gate Voltage Collector Current (Ices) | 4.0 mA Max |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.7 to 3.5 V |
| Turn-on Time (ton) | 0.4 to 0.8 µs |
| Reverse Recovery Time (trr) | 300 ns Max |
The maximum junction operating temperature is +150 °C.
The maximum continuous collector current rating is 750 A.
The maximum power dissipation is 3125 W.
The recommended screw torque for the terminals is 4.5 Nm.