This document provides the electrical, thermal and switching characteristics of the Fuji Electric MBH75D-060S IGBT. It includes absolute maximum ratings, typical performance curves, and thermal resistance data for design reference.
Key sections cover ratings and characteristics, electrical parameters, thermal resistance, switching waveforms, and various performance graphs such as collector current versus voltage and switching time versus load conditions.
| Collector-Emitter Voltage (Vces) | 600 V |
|---|---|
| Gate-Emitter Voltage (Vges) | +30 V |
| Collector Current (Ic) at 25°C | 82 A |
| Collector Current (Ic) at 100°C | 75 A |
| Maximum Power Dissipation (IGBT) | 310 W |
| Maximum Power Dissipation (FHD) | 180 W |
| Operating Temperature (Tj) | +150 °C |
| Storage Temperature (Tstg) | -40 ~ +150 °C |
| Thermal Resistance (Rth(j‑c)) IGBT | 0.40 °C/W |
| Thermal Resistance (Rth(j‑c)) FHD | 0.69 °C/W |
The device can withstand up to 600 V between collector and emitter.
The maximum collector current at 25 °C is 82 A.
The IGBT is rated for an operating junction temperature up to +150 °C.
The thermal resistance from junction to case is 0.40 °C/W for the IGBT version.