This document is a technical datasheet for the FUJI 2SK108-01, an N-channel silicon power MOS-FET. It highlights key features such as high-speed switching, low on-resistance, and avalanche-proof capabilities suitable for switching regulators and DC-DC converters.
The datasheet provides comprehensive data including absolute maximum ratings (500V drain-source voltage, 45A continuous current), electrical characteristics like gate threshold voltage and capacitance values, and typical performance graphs for output resistance and transfer characteristics.
| Drain-source voltage | 500 V |
|---|---|
| Continuous drain current | 45 A |
| Pulsed drain current | 12 A |
| Max. power dissipation | 60 W |
| Operating and storage temperature range | -55~+150| °C |
| Gate threshold voltage (Typ.) | 3.5 V |
| Drain-source on-state resistance (Typ.) | 2.2 a |
The maximum continuous drain current is 45 A.
The maximum power dissipation is 60 W.