This document is a specification sheet for SAMSUNG flash memory products, including features and characteristics of models such as K9F1G08D0M, K9F1G16Q0M, K9F1G08U0M, K9F1G16U0M, K9F1G08Q0M, and K9F1G16D0M.
The K9F1G08U0M and K9F1G16U0M are NAND flash memory devices offered in 128M × 8‑bit or 64M × 16‑bit configurations. They support multiple supply voltages (1.8 V, 2.65 V, 3.3 V) and are intended for solid‑state storage applications requiring high reliability.
Key specifications include a typical program time of 300 µs, block erase time of 2 ms, endurance of 100 K program/erase cycles, and 10‑year data retention. The datasheet details pin‑out for TSOP‑1 and WSOP‑1 packages, timing parameters, and power‑up protection mechanisms such as a minimum 10 µs recovery time after power transitions.
| Memory capacity | 128M × 8 bit / 64M × 16 bit |
|---|---|
| Supply voltage (1.8 V device) | 1.70 V ~ 1.95 V |
| Supply voltage (2.65 V device) | 2.4 V ~ 2.9 V |
| Supply voltage (3.3 V device) | 2.7 V ~ 3.6 V |
| Typical program time | 300 µs |
| Typical block erase time | 2 ms |
| Endurance | 100 K program/erase cycles |
| Data retention | 10 years |
| Minimum recovery time after power transition | 10 µs |
| Page size (X8 device) | (2K + 64) Bytes |
A recovery time of at least 10 µs is required before the internal circuit can accept command sequences.
The 1.8 V device operates at 1.70 V ~ 1.95 V, the 2.65 V device at 2.4 V ~ 2.9 V, and the 3.3 V device at 2.7 V ~ 3.6 V.
The typical program time is 300 µs.
They are rated for 100 K program/erase cycles.