M464S3254DTS is a 32M bit x 64 synchronous dynamic RAM high density memory module manufactured by Samsung. It consists of eight CMOS 16M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate. Three 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M464S3254DTS is a Small Outline Dual In-line Memory Module and is intended for mounting into 144-pin edge connector sock- ets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.
The Samsung M464S3254DTS is a high‑density 32M×64 SDRAM SODIMM module built from eight 16M×16 DRAM chips and a 2K EEPROM. It is designed for 144‑pin edge‑connector sockets and operates with a single 3.3 V power supply. The module supports both PC133 and PC100 memory standards and offers programmable latencies and burst lengths.
The datasheet provides absolute maximum ratings, recommended DC and AC operating conditions, pin configurations, timing parameters, and Serial Presence Detect (SPD) information. Key specifications include supply voltage range, operating frequencies up to 133 MHz, refresh rate of 8K cycles per 64 ms, and a 4‑bank architecture.
| Memory capacity | 32M × 64 bits |
|---|---|
| Supply voltage (Vbb) | 3.0 V – 3.6 V |
| Maximum operating frequency | 133 MHz @ CL=2 |
| Refresh interval | 8K cycles per 64 ms |
| Number of banks | 4 banks |
| CAS latency options | 2 & 3 |
| Package height | 1,250 mil |
The module operates with a supply voltage (Vbb) between 3.0 V and 3.6 V.
The module can run up to 133 MHz when CAS latency is set to 2.
It performs an 8K refresh cycle every 64 ms.
The SDRAM device contains four banks.