KMM5364003BSW/BSWG is a 4Mx36bits dynamic random access memory (DRAM) high density memory module manufactured by Samsung. The module consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
The Samsung KMM5364003BSW/BSWG is a 4 M × 36‑bit dynamic RAM SIMM that uses two 4 M × 16‑bit CMOS DRAMs and one Quad‑CAS 4 M × 4‑bit DRAM in a 72‑pin TSOP package. It is designed for use in 72‑pin edge‑connector sockets and operates from a single +5 V supply.
The data sheet provides detailed electrical characteristics, absolute maximum ratings, recommended operating conditions, pin configurations, capacitance values, timing parameters and mechanical dimensions of the module.
| Memory organization | 4M × 36 bits (4M × 16 bits + Quad‑CAS 4M × 4 bits) |
|---|---|
| Supply voltage (typical) | 5.0 V |
| Storage temperature range | -55 °C to +125 °C |
| Power dissipation | 3 W |
| Package dimensions (L × W × H) | 4.250 in × 3.984 in × 0.133 in |
The module is recommended to operate from a 5 V supply, with a typical value of 5.0 V and a range of 4.5 V to 5.5 V.
Fast page mode operates with a 4 K cycle refresh period of 64 ms.