This document describes the features and characteristics of the Samsung KMM53216000B high density memory module, including 16Mx32bits dynamic RAM, fast page mode operation, CAS-before-RAS and hidden refresh capability, etc.
The KMM53216000BK/BKG is a 16M × 32 bit dynamic RAM SIMM built from eight 16M × 4 bit DRAM chips on a 72‑pin glass‑epoxy substrate. It operates in fast page mode with TTL‑compatible I/O and a single +5 V supply.
Key specifications include a supply voltage range of 4.5 V–5.5 V, input high voltage of 2.4 V, input low voltage of 0.8 V, access times of 50 ns (RAS) and 13 ns (CAS), and package dimensions of roughly 4.25 × 3.98 × 0.13 in. The datasheet also details pin assignments, absolute maximum ratings, and timing parameters for various operating modes.
| Capacity | 16M × 32 bits |
|---|---|
| Supply Voltage (Vcc) | 4.5 V – 5.5 V |
| Input High Voltage (VIH) | 2.4 V |
| Package Dimensions | 4.250 × 3.984 × 0.133 in |
| Pin Count | 72 pins |
The module operates with a Vcc of 4.5 V to 5.5 V.
The SIMM uses a 72‑pin glass‑epoxy substrate.