KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM is a 4Mx36bits Dynamic RAM high density memory module produced by Samsung. It consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs packaged in TSOP, mounted on a 72-pin glass epoxy substrate. Each DRAM has a 0.1 or 0.22uF decoupling capacitor mounted on the printed circuit board. The KMM5364005C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
The Samsung KMM5364005CSW/CSWG is a 4Mx36‑bit dynamic RAM SIMM built from two 4Mx16‑bit and one Quad‑CAS 4Mx4‑bit DRAMs in TSOP packages, mounted on a 72‑pin edge connector. It supports EDO mode operation with TTL‑compatible inputs and a single +5 V supply.
Key electrical data include a supply voltage range of 4.5‑5.5 V, power dissipation up to 3 W, storage temperature from –55 °C to +125 °C, and access times as fast as 50 ns (TRAC) and 13 ns (tcac). The datasheet also lists detailed pin functions, capacitance values, and package dimensions.
| Memory organization | 4M × 36 bits |
|---|---|
| Supply voltage (Vcc) | 4.5 V – 5.5 V |
| Power dissipation | 3 W |
| Storage temperature range | -55 °C – +125 °C |
| Input capacitance (A0‑A11) | 25 pF |
| Random read/write cycle time (tro) | 84 ns – 104 ns |
The module operates with a supply voltage between 4.5 V and 5.5 V.
It can be stored from –55 °C up to +125 °C.
The part numbers are KMM5364005CSW (solder‑plated) and KMM5364005CSWG (gold‑plated).