This document introduces the key features of the 512Mb C-die DDR2 SDRAM product, including speed, voltage, package pinout and addressing method.
This datasheet provides detailed specifications for Samsung's 512Mb C-die DDR2 SDRAM, covering electrical characteristics, timing parameters, and mechanical dimensions.
It includes ordering information, key features such as programmable CAS latency and on‑die termination, pinout diagrams for 60‑ball and 84‑ball FBGA packages, absolute maximum ratings, and operating conditions.
| Operating voltage | 1.8 V + 0.1 V |
|---|---|
| CAS latency options | 3, 4, 5 |
| Maximum data rate | 800 Mb/s per pin (DDR2‑800) |
| Memory organization | 32 Mbit × 4 I/Os × 4 banks (or 16 Mbit × 8 I/Os × 4 banks, 8 Mbit × 16 I/Os × 4 banks) |
The device operates with a single 1.8 V + 0.1 V power supply.
The device supports up to 800 Mb/s per pin (DDR2‑800).
Programmable CAS latency values are 3, 4, and 5.