MRF175LU MRF175LV1 is a RF device from Motorola. This device uses a single-ended circuit and operates at frequencies up to 400MHz. It has high power, high gain and broadband performance, making it suitable for use in solid-state transmitters for FM broadcast or TV channel frequency bands.
The MRF175LU is an N‑channel enhancement‑mode RF power MOSFET designed for broadband commercial and military applications up to 400 MHz. It delivers 100 W output power with high gain and efficiency, making it suitable for HF, VHF and UHF power amplifier designs.
The sheet lists maximum ratings, thermal and electrical characteristics, typical performance curves, and recommended handling and packaging procedures. Key parameters include a 65 V drain‑source rating, 40 V gate‑source rating, 13 A continuous drain current, and 270 W total dissipation. Proper antistatic handling and grounding are required to avoid device damage.
| Drain‑Source Voltage (Vds) | 65 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +40 V |
| Continuous Drain Current (Id) | 13 A |
| Total Device Dissipation | 270 W |
| Storage Temperature Range | -65 °C to +150 °C |
| Thermal Resistance (J‑C) | 0.65 °C/W |
| Output Power | 100 W |
| Power Gain (typ) | 10 dB |
| Efficiency (typ) | 55 % |
The device is rated for a maximum drain‑source voltage of 65 V.
MOSFETs should be shipped in antistatic bags, handled with grounding straps, and touched only by the case, not the leads.