QS5W2 is a NPN silicon epitaxial planar transistor with low saturation voltage and high switching speed. It is suitable for various switch power supplies and driving power supplies.
The QS5W2 is a mid‑power NPN silicon planar transistor (50 V / 3 A) offered by ROHM for driver applications and other general‑purpose electronic circuits. The datasheet outlines its structure, features, and typical application uses.
Key specifications include a collector‑emitter voltage rating of 50 V, a typical saturation voltage of 0.35 V at 1 A/50 mA, a maximum collector current of 3 A, power dissipation up to 1.25 W, DC current gain of 180‑450, and a transition frequency of 320 MHz. Packaging details, absolute maximum ratings, and characteristic curves are also provided.
| Collector‑emitter voltage (Vceo) | 50 V |
|---|---|
| Collector‑base voltage (Vcbo) | 50 V |
| Emitter‑base voltage (Vebo) | 6 V |
| Collector current (Ic) | 3 A |
| Saturation voltage (Vce(sat)) | 0.35 V (typical) |
| DC current gain (hFE) | 180‑450 |
| Transition frequency (fT) | 320 MHz (typical) |
| Power dissipation (Pd) | 1.25 W total |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to 150 °C |
The QS5W2 can withstand up to 50 V between collector and emitter.
Typical VCE(sat) is 0.35 V when Ic = 1 A and Ib = 50 mA.
The device can dissipate up to 1.25 W total.
The junction temperature rating is 150 °C.