This document is the data sheet of QS6Z5 from ROHM Co., Ltd. QS6Z5 is a NPN/PNP silicon epitaxial planar transistor with low saturation voltage and high speed switching characteristics.
The QS6Z5 is a complex medium‑power NPN/PNP silicon planar transistor designed for low saturation voltage and high‑speed switching applications. It is offered in a TSMT6 surface‑mount package.
The document lists absolute maximum ratings such as 50 V collector‑emitter voltage, 1 A collector current, and 0.5 W total power dissipation, along with detailed electrical characteristics, characteristic curves, and a switching‑time test circuit. This manual is written in Chinese.
| Collector‑emitter voltage (VCEO) | 50 V |
|---|---|
| Saturation voltage (VCE(sat)) | 0.35 V (max) |
| Power dissipation (PD) | 0.5 W total |
| Junction temperature (Tj) | 150 °C |
| Package | TSMT6 |
The QS6Z5 can withstand up to 50 V between collector and emitter.
The saturation voltage is specified as 0.35 V (maximum) at IC = 500 mA and IB = 25 mA.
The transistor is supplied in a TSMT6 surface‑mount package.