QS5Y1 is a low voltage, high power, PNP/NPN transistor. It features low voltage saturation voltage and high switching speed.
The QSSY1 is a medium‑power PNP/NPN silicon epitaxial planar transistor designed for low‑frequency amplifier and driver applications. It features a low saturation voltage, high‑speed switching, and can handle up to 3 A collector current.
The datasheet lists absolute maximum ratings, electrical characteristics, packaging details, and typical application circuits. It also includes switching‑time test circuit diagrams and legal notices regarding use and export.
| Collector‑emitter voltage (Vceo) | -30 V (max) |
|---|---|
| Collector current (Ic) | 3 A (max) |
| Saturation voltage (Vce(sat)) | -0.40 V (max) |
| Power dissipation (Pp) | 1.25 W |
| Transition frequency (fT) | 300 MHz (typ) |
The maximum collector current is 3 A.
The typical transition frequency is 300 MHz.
The saturation voltage is typically –0.40 V (max).