QS8F2 is a low-voltage drive Pch MOSFET+PNP TRANSISTOR produced by ROHM. It has the characteristics of low on-resistance, high power package, and low voltage drive. It is suitable for switching power supplies and other applications.
The QS8F2 is a dual‑function semiconductor device that integrates a low‑on‑resistance P‑channel MOSFET with a PNP transistor. It is designed for low‑voltage drive (1.5 V) and high‑current applications, featuring a high‑power TSMT8 package.
Typical applications include switching circuits and general‑purpose electronic equipment. The data sheet lists absolute maximum ratings, detailed electrical characteristics, and measurement circuit examples to aid designers in implementing the device safely and effectively.
| Drain‑source voltage (V_DSS) | -12 V |
|---|---|
| Gate‑source voltage (V_GSS) | +10 V |
| Continuous drain current (I_D) | 42.5 A |
| Power dissipation (P_D) | 15 W |
| Junction temperature (T_J) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Drive voltage | 1.5 V |
| Package type | TSMT8 |
The QS8F2 can withstand a drain‑source voltage of up to –12 V.
The device is designed for a low‑voltage drive of 1.5 V.
It is rated for a maximum power dissipation of 15 W.
The component is packaged in a high‑power TSMT8 case.