The document describes the features and characteristics of ROHM's medium power transistor QS5Y2, including low saturation voltage and high speed switching.
The QS5Y2 is a medium‑power NPN/PNP silicon epitaxial planar transistor offered by ROHM. It is intended for low‑frequency amplifiers, drivers, and other general‑purpose electronic equipment such as audio‑visual, office‑automation, and communication devices.
The sheet lists absolute maximum ratings, typical electrical parameters, and characteristic curves, along with packaging details (TSMTS) and a switching‑time test circuit. Additional legal and safety notices are included at the end of the document.
| Collector‑emitter voltage (VCEO) max | -50 V |
|---|---|
| Collector‑base voltage (VCBO) max | -50 V |
| Emitter‑base voltage (VEB) max | 6 V |
| Collector current (Ic) max (Tr2) | 3 A |
| Power dissipation (P) max | 1.25 W total |
| Junction temperature (Tj) max | 150 °C |
| Typical saturation voltage VCE(sat) at Ic=1 A | -0.40 V |
The maximum collector‑emitter voltage is -50 V.
The typical saturation voltage is about -0.40 V.
No, the QS5Y2 products are not designed to be radiation tolerant.
The QS5Y2 is supplied in a TSMTS package.