QSH29 dual digital transistors have low saturation voltage and high current gain, built-in Zener diode protection, suitable for driving circuits
The QSH29 is an NPN silicon epitaxial planar transistor designed for driver applications. It features a low collector saturation voltage, high current gain, and a built‑in Zener diode for surge protection.
The document lists absolute maximum ratings, dimensions, and detailed electrical characteristics such as VCE(sat), hFE, and collector current limits, along with characteristic curves and application notes.
| Collector‑emitter saturation voltage (VCE(sat)) | 100 mV (typ) at IC=100 mA / IB=1 mA |
|---|---|
| Minimum DC current gain (hFE) | ≥500 at VCE=5 V, IC=200 mA |
| Junction temperature (Tj) | 150 °C |
| Built‑in Zener diode | Provides surge protection |
It is typically 100 mV when the collector current is 100 mA and the base current is 1 mA.
The transistor has a minimum hFE of 500 at a collector‑emitter voltage of 5 V and collector current of 200 mA.
Yes, it includes a built‑in Zener diode to protect against surges when connected to inductive loads.