QS5W1 is a ROHM NPN medium power transistor with low saturation voltage and high switching speed.
The QS5W1 is a medium‑power NPN silicon epitaxial planar transistor designed for low saturation voltage and high‑speed switching. It is offered in a TSMTS package with dimensions and ordering details listed in the datasheet.
The document details absolute maximum ratings, electrical characteristics such as collector‑emitter voltage, current, saturation voltage, transition frequency, and power dissipation. It also includes characteristic curves, a switching‑time test circuit, and a notice covering usage and legal information.
| Collector‑emitter voltage (Vceo) | 30 V |
|---|---|
| Collector current (Ic) | 3 A |
| Saturation voltage (Vce(sat)) | 0.4 V (max) |
| Transition frequency (fT) | 270 MHz |
| Power dissipation (Pp) | 1.25 W |
| Junction temperature (Tj) | 150 °C |
The QS5W1 can withstand up to 30 V between collector and emitter.
The saturation voltage is specified as 0.4 V (maximum) at Ic = 1 A.
The device has a transition frequency of about 270 MHz.