This document provides the parameters and specifications of QSZ2, including structure, dimensions, features, applications, package, equivalent circuit, etc.
The QSZ2 is a general‑purpose silicon planar transistor offered in a compact TSMT5 package. It features low collector‑emitter saturation voltage and a small footprint, making it suitable for DC‑DC converters and motor driver circuits.
The datasheet lists the electrical parameters, absolute maximum ratings, and characteristic curves, including voltage limits, current capability, power dissipation, and temperature ranges. It also includes packaging dimensions and ordering information.
| Collector‑emitter voltage (Vceo) | -30 V |
|---|---|
| Emitter‑base voltage (Vebo) | -6 V |
| Power dissipation (Pc) | 1.25 W |
| Maximum junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
The QSZ2 can withstand up to -30 V collector‑emitter voltage.
Typical applications include DC‑DC converters and motor driver circuits.
The device is rated for a junction temperature up to 150 °C.