2SA1312 is a high voltage PCT process silicon PNP type transistor produced by Toshiba. This product features high voltage, high hFE, low noise and is suitable for audio frequency low noise amplifier applications.
The Toshiba 2SA1312 is a silicon PNP epitaxial transistor designed for low‑noise audio frequency amplifier applications. The document provides absolute maximum ratings, electrical characteristics, noise performance and handling guidelines.
Key information includes collector‑base and collector‑emitter voltage limits, current ratings, power dissipation, transition frequency, noise figure, and recommended reliability practices. Restrictions on product use and safety considerations are also outlined.
| Collector‑base voltage (VcBo) | -120 V |
|---|---|
| Collector‑emitter voltage (VcEo) | -120 V |
| Collector current (Ic) | -100 mA |
| Base current (IB) | -20 mA |
| Power dissipation (Pc) | 150 mW |
| Junction temperature (Tj) | 125 °C |
| Weight | 0.012 g (typ.) |
| Noise figure (NF) at 1 kHz | 0.2 dB (typ.) |
| Storage temperature range | -55 °C to 125 °C |
The maximum collector‑emitter voltage is -120 V.
The typical noise figure is 0.2 dB at 1 kHz.
The device can be stored from -55 °C up to 125 °C.